Experimental Determination of the Dependence Between Spectral Response and Current–Voltage Characteristics for MWIR HgCdTe Detectors

Abstract Experimental results are reported for a medium-wavelength infrared (MWIR) HgCdTe photodetector designed in joint laboratory run by VIGO Photonics S.A. and the Military University of Technology. The parameters MWIR detectors fabricated with heterostructures were studied. Advances metal–organic chemical vapor deposition (MOCVD) technique enable growth epilayers wide range composition doping, used uncooled detectors. Device-quality deposited on 2-inch-diameter, low-cost (100) GaAs substrates. obtained examined measuring spectral response current–voltage characteristics different temperatures. Our intention here was to determine relationship between electrical optical results, using thermal analysis dark current properties photocurrent characteristics. appearance an additional signal source certain ranges reverse voltages examined. Comparative electro-optical characterization enabled us isolate originating from layers detector structure. Automated measurement techniques make it possible correlate responsivity curves measured as function temperature 10 K 300 ±0.05 resolution without human exertion. LabVIEW-aided data acquisition enables averaging each characteristic several hundred times, eliminates random errors, decreases uncertainty. Graphical